Defect inspection apparatus and its method

ABSTRACT

A defect inspection apparatus for inspecting defects on an inspecting object includes an illuminator which irradiates a beam of light on the inspecting object, a photo-detector which detects rays of light from the inspecting object due to the irradiation of the light beam by the illuminator, a defect detector which detects a defect by processing a signal obtained through detection by the photo-detector, a characteristic quantity calculator which calculates a characteristic quantity related to a size of the defect, and a defect size calculator which uses a relation between size and characteristic quantity which is calculated by an optical simulation and calculates a size of the detected defect.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.13/099,530, filed May 3, 2011, now allowed, which is a continuation ofU.S. application Ser. No. 12/153,853, filed May 27, 2008, now U.S. Pat.No. 7,940,385, the contents of which are incorporate herein byreference.

INCORPORATION BY REFERENCE

The present application claims priority from Japanese applicationJP2007-190300 filed on Jul. 23, 2007, the content of which is herebyincorporated by reference into this application.

BACKGROUND OF THE INVENTION

The present invention relates to a defect detection method and itsapparatus in which when detecting defects present on a thin filmsubstrate, a semiconductor substrate, a photo-mask and the like that areused for manufacturing a semiconductor chip, a liquid crystal product, amagnetic disk head and a sensor such as CCD or CMOS as well and thenwhen analyzing the cause of the faults, the results of inspection can bedisplayed or outputted in a format easy for a user to analyze, thuspermitting the cause of the faults to be surveyed.

Conventionally, the technique of detecting defects on, for example, asemiconductor substrate by using an optical measurement means has beenknown widely. For example, Patent Document 1 (JP-A-62-89336) discloses atechnique in which rays of scattering light, generated from a defectunder irradiation of a laser beam on a semiconductor substrate in theevent that the defect is deposited thereon, are detected and a result ofdetection is compared with a result of an inspection of the same kind ofsemiconductor substrate executed immediately precedently, thereby makingit possible to inspect the defect.

Also, Patent Document 2 (JP-A-5-273110) or patent Document 3(JP-A-2003-98111) discloses a method in which a laser beam is irradiatedon an object to be inspected and scattering rays of light generated froma particle or crystal defect of the inspected object are received andsubjected to image processing to thereby measure a size of the particleor crystal defect.

On the other hand, in the production line of semiconductor substrate,thin film substrate and the like, a control method of monitoring defectson a substrate has hitherto been employed as one of methods forcontrolling the production process of products. In one of the monitoringmethods, the surface of a substrate is inspected using a defectinspection apparatus and the lapse of the number of detected defectsdelivered out of the defect inspection apparatus is monitored so that afault analysis of defects may be executed especially for a substrate forwhich the number of detected defects is large.

SUMMARY OF THE INVENTION

In the conventional process control method, rays of scattering lightgiven off from a particle or a defect can be detected with an inspectionapparatus of the light scattering type, used as the inspection apparatusfor monitoring the production line, and they can be subjected to animage processing so as to calculate the dimension of the defect butthere still remains a problem of failure to properly calculate thedimension.

The present invention contemplates solving the problem the conventionaltechnique encounters and it is an object of this invention to provide adefect inspection method and its apparatus according to which wheninspecting the procedures for producing a semiconductor wafer or a thinfilm substrate and conducting a fault analysis, a means for correctingthe dimension is provided to thereby ensure that the defect dimensioncan be calculated properly and countermeasures against faults can betaken speedily.

Of inventions disclosed in the present application, typical ones will beoutlined briefly as follows:

(1) A defect inspection apparatus for inspecting defects on an object tobe inspected, comprises illumination means for irradiating a beam oflight on the inspecting object, photo-detection means for detecting raysof light given off from the inspecting object under the irradiation ofthe light beam by the illumination means, defect detection means fordetecting a defect by processing a signal obtained through detection bythe photo-detection means, correction means for correcting the size ofthe detected defect by using a ratio between a quantity characteristicof the defect detected by the defect detection means and a correspondingcharacteristic quantity of a standard particle measured and calculatedin advance, and display means for displaying the defect size correctedby the correction means.

(2) A defect inspection apparatus as recited in (1), wherein thephoto-detection means has a sampling pitch which is half or less theoptical resolution.

(3) A defect inspection method for detecting defects on an object to beinspected, comprises illumination step of irradiating a beam of light onthe inspecting object, photo-detection step of detecting rays of lightgiven off from the inspecting object under the irradiation of the lightbeam in the illumination step, defect detection step of detecting adefect by processing a signal obtained through detection in thephoto-detection step, and correction step of correcting the size of thedetected defect by using a ratio between a quantity characteristic ofthe defect detected in the defect detection step and a correspondingcharacteristic quantity of a standard particle measured and calculatedin advance.

(4) A defect inspection method as recited in (3), wherein thephoto-detection step is executed at a sampling pitch which is half orless the optical resolution.

These and other objects, features and advantages of the invention willbe apparent from the following more particular description of preferredembodiments of the invention, as illustrated in the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flowchart showing procedures for defect dimensioncalculation according to the present invention.

FIG. 2 is a block diagram showing the schematic construction of a defectinspection apparatus according to the present invention.

FIG. 3 is a block diagram for explaining the mode when the defectinspection apparatus according to the invention is operated as a system.

FIG. 4 is a block diagram for explaining the mode when the defectinspection apparatus according to the invention is used in combinationwith a defect review apparatus so as to operate as a system.

FIG. 5A is a diagram showing an image data when a defect is present.

FIG. 5B is a diagram showing a distribution of signal intensities whendefect data is measured.

FIGS. 6A and 6C are diagrams for making contrast between two kinds ofsignal intensities.

FIGS. 6B and 6D are diagrams for explaining determination of the maximumvalue of signal intensities.

FIGS. 7A and 7B are graphs useful for comparison of a linear Besselfunction with a Gaussian function.

FIG. 8A is a diagram showing an image of a defect.

FIG. 8B is a diagram showing a distribution of variable density valuesof the image in FIG. 8A.

FIG. 8C is a diagram showing variable density values when noises areincluded.

FIG. 9A is a graphic representation showing a distribution of saturatedsignal intensities on XY plane.

FIGS. 9B and 9C are a graph and a plan view for explaining how todetermine the maximum value of signal intensities.

FIGS. 10A, 10B and 10C are diagrams showing signal waveforms of defects,with FIGS. 10B and 10C especially illustrating signal intensitycumulated values of a signal intensity portion for which the signalintensity is smaller than different specified values.

FIG. 11 is a graph showing the relation between the size of standardparticles and the sixth root of the signal intensity cumulative value.

FIG. 12 is a graph showing examples of calculation of approximate curvesbased on the method of least squares and the M-estimation method,respectively.

FIG. 13 is a graph showing the relation between the size of standardparticles and the cumulative value of signal intensities.

FIG. 14 is a graph showing an example where approximate curves differingwith the size are applied.

FIG. 15 is a graph showing an example of weight function in theM-estimation method.

FIG. 16 is a flowchart showing the procedures for data processing in theM-estimation method.

FIG. 17 is a graphic representation showing the relation between theGaussian function and the sampling pitch.

FIG. 18 is a graph useful to compare the relation between thetheoretical value of scattering light quantity and the scattering lightquantity estimative value from the standpoint of the sampling pitch.

FIG. 19 is a graph similar to FIG. 18.

FIGS. 20A and 20B are diagrams for explaining aberration in the opticalsystem.

FIGS. 21A and 21B are diagrams for explaining irregularities insensitivity of a sensor which depend on the pixel.

FIGS. 22A to 22C are diagrams for explaining an example of a dimensioncorrection method using standard samples.

FIGS. 23A and 23B are flowcharts showing examples of the procedures in adimension correction method.

FIG. 24 is a flowchart showing the procedures for calculation ofcorrection coefficients.

FIGS. 25A and 25B are graphic representations showing an example wherecalculation of the characteristic quantity related to the dimension isexecuted case by case in compliance with sorting by characteristicquantities and other kinds of information.

DESCRIPTION OF THE EMBODIMENTS

Referring first to FIG. 1, the basic procedures for calculation of thesize of a defect will be described.

Firstly, a beam of light is irradiated on an object to be inspected andrays of light (an electromagnetic wave) from a defect or pattern withinan irradiated area are detected (step 110) and information about acomponent of detected rays of light which is based on the detecteddefect is extracted (step 120). Subsequently, of the thus obtaineddefect component information, a characteristic quantity (the sum ormaximum value of signal intensities to be detailed later) related to asize of the defect is calculated (step 130). Then, out of the defectcomponent information, the defect size calculated from the quantity ofrays of scattering light is corrected by using a ratio between the nowcalculated characteristic quantity and a corresponding characteristicquantity of a standard particle measured and calculated in advance,thereby calculating a proper defect dimension (step 140). The result ofcalculated dimension is saved, displayed, outputted and transferred(step 150).

Namely, according to the present invention, the measurement result ofthe size of a defect can be corrected by using the comparative databetween a characteristic quantity having the relation to the dimensionof the defect and a corresponding characteristic quantity of a standardparticle and consequently, a proper defect dimension can be calculated.

Details of the construction of a defect inspection apparatus and defectinspection system and a method of correcting the size of a defect, whichare adapted for realizing the above advantage of the invention, will bedescribed. An embodiment to be given hereinafter will be described asapplied particularly to an example where defects on a semiconductorwafer are inspected but this is not limitative and the present inventioncan also be applied to a thin film substrate, a photo-mask, a TFT, a PDPand the like.

[Construction and Operation of Defect Inspection Apparatus and DefectInspection System]

Turning to FIG. 2, an example of the defect inspection apparatus of thisinvention will be described. The defect inspection apparatus comprisesan illumination optical system 100 for irradiating a beam of light on anobject to be inspected 1, a stage unit 200 for holding the inspectingobject 1, a photo-detection unit 300 for detecting rays of reflectionlight or scattering light given off from the inspecting object 1 underthe irradiation of the light beam on the inspecting object 1, a signalprocessing circuit 400 for processing a signal as a result ofphotoelectric conversion of the detected rays of light and a dataprocessor 2, additionally comprising as necessary a Fourier transformplane observing unit 500 adapted to pick up an image on a Fouriertransform plane of the detection optical system and observe it, anobservation unit 600 adapted to observe an alignment mark, for example,built on the inspecting object 1 for the purpose of positioning orposition matching a detected defect or a pattern formed on theinspecting object 1, and an auto-focus illumination unit 701 andauto-focus light receiving unit 702 which is adapted to controllablylocate the stage to a suitable focal position.

Defect detection with the present defect inspection apparatus is carriedout in accordance with the procedures as below. A beam of light isirradiated on the inspecting object 1 carried on the stage unit 200 bymeans of the illumination optical system 100 and rays of reflectionlight or scattering light given off from the inspecting object 1 arecollected and detected by the photo-detection unit 300. The illuminationoptical system 100 referred to herein includes a light source 101, anoptical parts assemblage 102 and an illumination controller 103, theillumination controller 103 being operative to respond to a command fromdata processor 2 which is applied thereto from a an input unit 4 or byway of a network 6 so as to adjust the output of the light source 101.As the light source 101, a laser light source, for example, to bedescribed later can appropriately selectively used as necessary. Theillumination light beam is suitably shaped by means of the optical partsassemblage 102 so as to take a circular or linear form on the inspectingobject 1. It will be appreciated that the illumination light beam may beeither a parallel beam or non-parallel beam and if the quantity of lightper unit area on the inspecting object 1 is desired to be increased, theillumination light may be irradiated at a high numerical aperture so asto be focused on the inspecting object or the output of the illuminationlight source may be increased.

Also, the stage unit 200 includes a stage 201 and a stage controller 202so that the inspecting object 1 may be moved in the horizontal directionby means of the stage 201 and besides, with the help of the auto-focusillumination unit 701 and auto-focus light receiving unit 702, the stage201 may be moved in the vertical direction so as to be brought into thefocal position of the photo-detection unit 300, thus ensuring thatdetection of defects and measurement of their sizes can be executed overthe entire area of the inspecting object 1. Then, the detection resultis displayed on a data display unit 3 or transferred through the network6.

The photo-detection unit 300 includes an objective lens 301, a spatialfilter 302, an image forming lens 303, a polarization plate 304 and asensor 305 as necessary. The optical lens is so structured as to focusrays of light from the inspecting object 1, out of the light beamirradiated by means of the illumination optical system 100, on thesensor 305. Further, the photo-detection unit 300 is so structured as toapply to rays of scattering light an optical process, for example,change/adjustment of optical characteristics by means of the spatialfilter 302 and polarization plate 304. More specifically, since thespatial filter 302 shields a diffraction light pattern caused bydiffraction light from a repetitive pattern of the inspecting object 1,it is disposed on the Fourier transform plane of the objective lens 301.The Fourier transform plane observing unit 500 so structured as to getto or get away from the optical path in the photo-detection unit 300observes a diffraction pattern of the inspecting object 1 and the lightshielding shape of the spatial filter 302 is set such that the observeddiffraction pattern can be shielded. Namely, with the spatial filter 302removed, the Fourier transform plane observing unit 500 is firstinserted to the optical path of photo-detection unit 300, the opticalpath is caused to branch by means of a beam splitter 501 to permit animage of the Fourier transform plane of objective lens 301 to be pickedup and observed by a camera 503 through the medium of a lens 502. Thelight shielding pattern of spatial filter 302 can be set in respect ofindividual kinds of the inspecting object 1 and individual productionsteps. Alternatively, the light shielding pattern of spatial filter 302may remain unchanged during scanning or may be changed by using liquidcrystal, for example, on real time base in accordance with areasundergoing scanning. In the case of using the spatial filter, theperformance of detection of defects can be more improved with a parallellight beam used as the illumination light.

The polarization plate 304 may be used for optical processing as will bedescribed below. Since the defect makes polarization of illuminationliable to be random whereas the polarization state is prone to beconserved in an area where the pattern of the inspecting object 1 isnormal or any pattern does not exist, rays of light from a defect can bedetected highly efficiently by setting during detection the polarizationplate in a direction in which P-polarization can transmit whenS-polarization light is irradiated. In the case of irradiation ofP-polarization light, the polarization plate may be set in a directionin which S-polarization light transmits.

Rays of light acquired by the photo-detection unit 300 as describedabove are subjected to photoelectric conversion and sent to the signalprocessing circuit 400 so as to be processed thereby, permitting thedefect to be detected. The signal processing circuit 400 includes asection for detection of a defect and a section for measurement of thesize of the defect. In detecting a defect, an input signal isbinary-digitized, for example, and a signal in excess of abinary-digitized threshold value is determined as representing thedefect and is outputted. The process of measurement of the defect sizewill be described later.

The present defect inspection apparatus further comprises the datadisplay unit 3, input unit 4 and data storage 5 which are coupled to thedata processor 2, so that an inspection can be executed while setting anarbitrary condition and then the inspection result and the inspectioncondition as well can be saved and displayed. The present defectinspection apparatus can also be coupled to the network 6 and can beallowed to share on the network 6 the inspection result, the layoutinformation, lot number, inspection condition of the inspecting object 1or data representative of an image of a defect observed by theobservation unit and the kind of defect.

A description of details of the construction of the defect inspectionapparatus according to the present invention and constituentsappropriately additionally provided therefor will be supplemented.

As the light source 101, either a laser light source such as an Arlaser, a semiconductor laser, a YAG laser and a UV laser or a whitelight source such as a Xe lamp and a Hg lamp may be used. Especiallywhen the sensitivity to detection of defects is desired to be promoted,the use of a light source having a short wavelength as the illuminationlight source is preferable and in this respect, the YAG laser, Ar laserand UV laser are suitable. Further, for a compact and inexpensiveinspection apparatus, the semiconductor laser is recommendable.Furthermore, with a view to reducing an interference attributable to alight transmission type thin film formed on the inspecting object, thewhite light source or laser illumination having the capability to reducethe interference is suitable as the illumination light source. Then, forthe aforementioned optical parts assemblage 102, a beam expander, acollimator lens or a cylindrical lens may be used purposefully.

The sensor 305 is used for receiving collected rays of light andapplying them with photoelectric conversion and as this sensor, a TVcamera, a CCD linear sensor, a TDI sensor, an anti-blooming TDI or aphotomultiplier, for example, may be employed. Especially, for detectionof a slight quantity of light, the photomultiplier may preferably beused and for fast acquisition of a two-dimensional image, the TV cameramay be recommendable. Further, in the case of the photo-detection system300 being an image forming system, any one of the TV camera, CCD linearsensor, TDI sensor and anti-blooming TDI sensor may be preferable and inthe case of the photo-detection system 300 being a focusing system, thephotomultiplier may be preferable. In addition, if the dynamic range ofrays of light received by the sensor 305 is large, that is, if rays oflight having intensity for which the sensor is saturated are incident, asensor added with the anti-blooming function may be recommended.

The auto-focus illumination unit 701 enables a light beam emitted from,for example, a white light source such as Hg lamp or a laser lightsource of He—Ne, for instance, to be irradiated on the inspecting object1. If the wavelength of the light source used for the auto-focusillumination unit 701 is different from that of the light source usedfor the illumination optical system 100, noise in the light beam usedfor defect detection can be reduced.

The auto-focus light receiving unit 702 is adapted to receive a lightcomponent reflected from the inspecting object 1 out of the light beamemitted from the auto-focus illumination unit 701 and is implemented bya unit such as for example a position sensor which can detect theposition of the light component. In addition, information acquired bythe auto-focus light receiving unit 702 is sent to the stage controller202 directly or through the medium of the data processor 2 and used forcontrolling the stage.

In the defect inspection apparatus shown in FIG. 2, the illuminationoptical system 100 is exemplified as illuminating the inspecting object1 in one direction but alternatively, two or more illumination opticalsystems may be provided having different azimuths or different elevationangles or having them in combination to carry out inspection.

Next, the system configuration of the defect inspection apparatus of thepresent invention and its operation will be described. Reference will bemade to FIG. 3 showing a block diagram useful to explain the defectinspection apparatus of the invention operating as a system.

The system comprises the defect inspection apparatus 2001 of theinvention, a data server 2002, a defect review apparatus 2003, anelectrical test apparatus 2004, an analysis apparatus 2005 and a network6 to which individual apparatus are coupled. For example, the defectreview apparatus 2003 is an SEM, the electrical test apparatus 2004 is atester and the analysis apparatus 2005 is an apparatus for analyzingcomponents of a defect, such as EDX. The data server 2002 is a computercapable of collecting and storing the inspection data of defectinspection apparatus 2001, the reviewing results of defect reviewapparatus 2003, the test results of electrical test apparatus 2004 andthe analysis results of analysis apparatus 2005, and the network 6 is acommunication network complying with, for example, Ethernet (trademark).

Next, operation of the system using the defect inspection apparatus ofthis invention will be described. After an inspection by the defectinspection apparatus 2001 has been executed, a defect for whichcountermeasures are to be taken is selected. A result of the inspectionby the defect inspection apparatus 2001, including a serial number ofthe detected defect during inspection, position information of thedefect and size information of the defect, is added with informationabout the selected defect and is then transmitted to the data server2002 via the network 6. In a method of adding the information about theselected defect, a flag as to whether countermeasures are necessary, forexample, may be added to the inspection result. Then, in order toinvestigate in greater detail the defect detected by the defectinspection apparatus 2001, the inspecting object is moved to the defectreview apparatus 2003. For this movement, the inspecting object may beconveyed manually or mechanically. After completion of movement of theinspecting object to the defect review apparatus 2003, the defect reviewapparatus 2003 accesses the data server 2002 via the network 6 andreceives the inspection result from the data server 2002, startingreviewing by using this inspection result. At that time, by consultingthe information added by the defect inspection apparatus 2001 topreferentially review a defect needing countermeasures, the defectresponsible for a cause of fault can be analyzed speedily. Similarly, byconsulting the information added by the defect inspection apparatus2001, the analysis apparatus 2005 can also analyze preferentially thedefect needing countermeasures, thus enabling the cause of fault to beanalyzed speedily.

These review data and analysis result are stored in the data server 2002and are then corrected with the test result by the electrical testapparatus 2004 to finally decide the defect as to whether to be faultyor not. If the defect is not determined faulty finally, the data server2002 transmits to the defect inspection apparatus 2001 the data forchanging the standards adapted for selection of the defect against whichcountermeasures need to be taken and the standards fornecessity/non-necessity of countermeasures against the defect in theinspection apparatus 2001 can be changed, so that the defect needingcountermeasures can be selected with higher accuracies andcountermeasures against faulty in the process of semiconductorproduction can be taken speedily.

The foregoing description has been given by way of example oftransmission and reception of data through the network but theintervention of the network is not always necessary and the delivery ofthe data by means of a removable storage medium or a printed-out sheetof paper may be available.

Further, the defect inspection apparatus 2001 according to the inventionmay be used in combination with the defect review apparatus 2003 in adifferent way as will be described below. Part of illustration of FIG. 3is extracted therefrom as indicated in FIG. 4. In FIG. 4, an inspectionapparatus designated at 2001 is the defect inspection apparatusaccording to the present invention, for example. Designated by 2003 isan apparatus for reviewing defects on the inspecting object, beingimplemented by a critical dimension SEM, for example. A network 6 isadapted for transmission and reception of data between the inspectionapparatus 2001 and defect review apparatus 2003, establishing a systemcoupled by, for example, Ethernet (trademark). Operation will bedescribed hereunder by taking a defect, for instance.

Firstly, defects on an inspecting object are inspected by means of thedefect inspection apparatus 2001. A result of the inspection, including,for example, a serial number of a detected defect during inspection,position information of the defect and size information of the defect,is added to inspection data which in turn is transmitted to the defectreview apparatus 2003 via the network 6. The inspecting object is movedto the defect review apparatus 2003, followed by defect reviewing workwith the help of the defect review apparatus 2003. At that time, themagnification at the time of reviewing by the defect review apparatus2003 is changed in compliance with the information about the size of thedefect measured by the inspection apparatus 2001, making it possible toperform reviewing highly efficiently. More specifically, when theinformation about the size of the defect obtained from the inspectionapparatus 2001 indicates a small defect, reviewing is executed at a highmagnification during review so that details of the small defect may beobserved quickly. Conversely, when the information about the size of thedefect indicates a large defect, reviewing is executed at a lowmagnification during review so that the defect will not swell out of thereview screen even for the large defect, enabling review to proceed andan entire image of the defect to be observed quickly. For example, whenthe size of a defect in inspection data transmitted from the inspectionapparatus 2001 is 0.1 μm, reviewing is executed by setting the reviewmagnification in the defect review apparatus 2003 such that the field ofview is 1 μm and if the size of a defect is 10 μm, reviewing is executedby setting the review magnification in the defect review apparatus 2003such that the field of view is 100 μm. In this manner, highly efficientreview covering small to large defects can be carried out to accomplishhigh-speed analysis of detected defects.

The present example has been described by way of example of deliveringthe information about the size of a defect from the inspection apparatus2001 and changing the magnification of the review apparatus inaccordance with the size but in an alternative, the information aboutreview magnification and review view field in the defect reviewapparatus 2003 may be added to the inspection data by the inspectionapparatus 2001. Also, in the present example, the defect reviewapparatus 2003 has been described as performing reviewing at a reviewmagnification which makes the view field as large as ten times the sizeof a defect but this value of magnification may be changed to adifferent one and besides, if the accuracy of defect positioninformation in the inspection apparatus 2001 is known, reviewing may becarried out at a magnification taking the magnification based on thedefect size information and the accuracy of position information as wellinto account. In the present example, the review apparatus has beendescribed as being a critical dimension SEM but alternatively, a reviewSEM or an optical type microscope system may be employed and the presentmethod can be applied to apparatus or function purposing review.

Further, in the present example, reviewing of a defect with the help ofthe defect review apparatus 2003 has been described but even in the casethat reviewing of a defect is executed by means of the defect inspectionapparatus of the present invention, the present method can beapplicable.

[Measurement of Size of Defect]

Next, a process of measuring the size of a defect with the defectinspection apparatus of the invention will be described. In measurementof dimensions of defects in the present invention, a measurement methodusing rays of scattering light from a defect is available. The size(particle diameter) of a defect particle and the magnitude of rays ofscattering light from the particle can be approximated or analyzedappropriately through a known method based on “a correlation between theparticle size and the illumination light wavelength” and the method willbe explained below briefly.

When the particle diameter is far larger than the illumination lightwavelength, it can be expressed using the Fraunhofer approximation. Ifthe particle diameter is nearly three times the wavelength, the LorenzMie theory can be applied. If the particle diameter is smaller than thewavelength, the Rayleigh scattering theory can be applied. According tothe Rayleigh scattering theory, the quantity of scattering light by aparticle smaller than the wavelength of illumination light is a functionof the particle diameter, the illumination wavelength and the refractiveindex and a Rayleigh scattering coefficient σ representing the index ofscattering efficiency is expressed by the following equation:

$\sigma = {{\frac{2\pi^{5}}{3} \cdot \frac{d^{6}}{\lambda^{4}}}\left( \frac{n^{2} - 1}{n^{2} + 1} \right)^{2}}$

where π represents circle ratio, d particle diameter, λ wavelength and nrefractive index of the particle. It will be seen from the Rayleighscattering coefficient that when the illumination light wavelength isconstant, the quantity of scattering light is proportional to the sixthpower of the particle diameter. Accordingly, if the quantity ofscattering light by the particle can be measured, a numerical valueproportional to the particle diameter can be calculated. In other words,by multiplying the scattering light quantity by a suitable coefficientin terms of scalar, the particle diameter can be calculated. The aboveequation gives the index of scattering efficiency when the particle isin the air but the scattering efficiency on a wafer has substantiallythe same relation.

Image data in the presence of a defect is illustrated in FIG. 5A and adistribution of signal intensities obtained when defect data is measuredis illustrated in FIG. 5B. The two kinds of distribution of signalintensities are illustrated in a comparative fashion in FIGS. 6A and 6Cand acquisition of maximum values of the signal intensities areillustratively shown in FIGS. 6B and 6D.

An image processed by the signal processing circuit 400 in the presenceof a defect is exemplified as shown in FIG. 5A, demonstrating thatdefect data 801 exists in the center of the image. The defect data 801is outputted from the sensor 305 and acquired in the form of data havinga variable-density value by the signal processing circuit 400. The datain FIG. 5A is expressed three-dimensionally in FIG. 5B, indicating thatx and y axes are coordinate axes for determining positions inside theimage and signal intensities at the positions are plotted on z axis andthat individual z-coordinate points are interconnected by curves. InFIG. 5B, a waveform 802 shows the defect data 801 in terms of waveformdata. The waveform 802 has a sampling frequency corresponding to asampling pitch of the photo-detection unit and for example, when thephoto-detection unit 300 is comprised of an image forming opticalsystem, the higher the magnification of the optical system and thesmaller the size of one pixel of the sensor 305, the sampling frequencybecomes higher. In the case of the photo-detection unit being a focusingoptical system, the smaller the spot of illumination and the shorter thesampling time of sensor 305, the sampling frequency becomes higher.

Here, because of the natures of illumination optical system 100 andphoto-detection unit 300, the waveform 802 is a function of the secondpower of linear Bessel function.

A function of the second power of linear Bessel function and a Gaussianfunction are illustrated in FIGS. 7A and 7B, respectively. Because ofthe analogy between the two functions, the waveform 802 can otherwise beapproximated by the Gaussian function. In the following, a defectdimension measuring method will be studied on the assumption that thewaveform 802 is approximated by using a Gaussian distribution. Dependingon the size of a defect on the inspecting object 1, the width and heightof the Gaussian distribution change. Further, the width and height ofthat distribution also change with the illumination intensity of thelaser illumination the illumination optical system 100 uses.Accordingly, for various kinds of standard particles, the shape andcharacteristic quantity of detection waveforms are measured in advanceusing the apparatus construction of the present invention and a resultof the measurement is compared with the detected waveform 802 to therebyobtain information about a size of a detected defect.

In a method for comparison of the waveform of a standard particle withthe waveform 802 of a defect, a sum total (cumulative value) of signalintensities at a portion of defect data 801, that is, volume data ofwaveform 802 is measured and then volume data at the standard particleis compared with the volume data of defect data 801. But in case theillumination intensity of the illumination optical system 100 variesduring the measurement of data, respective pieces of volume data arenormalized by dividing them by illumination intensities of illuminationoptical system 100 used for them or the defect data 801 or volume dataof the standard particle is multiplied by the ratio between illuminationintensities in order for the volume data to be corrected.

In another method of comparing the waveforms, the maximum value ofsignal intensities of waveform 802 or the width of waveform 802 may beused for comparison. Apart from the volume data, the number of pixels onimages of signals representative of the standard particle and thedefect, respectively, may be used. This will be explained by makingreference to FIGS. 8A to 8C. Like FIG. 5A, FIG. 8A illustrates an imageof a defect, indicating defect data 801 representative of a signal ofthe defect attributable to rays of scattering light from the defect. InFIG. 8B, a variable density value of the defect data 801 isdiagrammatically illustrated to show the defect signal indicated by adefect signal portion 811 contoured by a thick-line frame. In the caseof an example shown in FIG. 8B, the aforementioned volume datacorresponds to a sum total of variable density values of individualpixels, amounting up to 527. Then, the number of pixels on the imagecorresponds to the number of pixels inside the defect signal portion811, amounting to 14 pixels and the width of the signal is 5 pixels in xdirection and 5 pixels in y direction. When the variable density valuesin FIG. 8B are affected by noises, they are changed as illustrated inFIG. 8C.

The method for determining the maximum value of signal intensities willnow be described with reference to FIGS. 6A to 6D. Of these figuresshowing an example of waveform data representative of defect data likethe waveform 802 shown in FIG. 5B, FIG. 6A illustrates an example wherethe signal waveform of defect data obtained by the photo-detection unit300 is a cone-shaped waveform having a peak, which waveform demonstratesthat the signal does not reach a saturation range of the sensor 305.FIG. 6C illustrates an example where the signal waveform of defect datais a waveform making a frustum top, which waveform demonstrates that thesignal reaches the saturation range of the sensor 305 and data in excessof the saturation range do not exist, indicating a deficit.

In drawing the signal waveform as shown in FIG. 6A, the maximum value ofsignal intensities is set to a value which is maximal as a result ofmutual comparison of signal intensities of individual pixels in thewaveform, that is, to a peak point signal intensity 804 (or 805 in FIG.6B). In drawing the signal waveform as shown in FIG. 6C, the maximumvalue of signal intensities is determined by performing calculation asbelow.

Firstly, in a saturation region 807, a maximum length standing uprighton x-y plane of the saturated region is determined. The maximum lengthportion in FIG. 6C is sectioned on line parallel to x-axis to obtain asectional waveform as shown in FIG. 6D. In FIG. 6D, abscissa representsa coordinate axis showing positions of pixels of the maximum lengthportion and ordinate is a coordinate axis showing the signal intensity.Signal intensity 808 indicates a saturation level of the sensor 305. Inrelation to this section, three or more points 811 are selected at whichthe signal is not saturated. Here, a description will be given on theassumption that 3 points are selected. More particularly, three pointsindicative of signal intensities of the unsaturated signal on thesectional waveform are selected in order of the magnitude. Wherecoordinates of the selected three points are x1, x2 and x3,respectively, and their signal intensities are z1, z2 and z3,respectively, equations of Gaussian distribution can be obtained fordata of the selected three points by using unknowns k, σ and μ asfollows:

z1=k/σ×exp(−(x1−u)̂2/(2×σ̂2))

z2=k/σ×exp(−(x2−u)̂2/(2×σ̂2))

z3=k/σ×exp(−(x3−u)̂2/(2×σ̂2))

The unknowns k, σ and μ can be determined by solving simultaneousequations of the above three equations.

Then, by using determined values of k and σ, the maximum value of thesignal intensities in FIG. 6D can be calculated as being k/σ.

In the foregoing, the example of calculation using the unknown μ isexplained but the use of the unknown μ is not always necessary. In sucha case, two points of signal 811 are selected. Two points indicative ofsignal intensities of the unsaturated signal on the sectional waveformare selected in order of the magnitude. Where coordinates of the twoselected points are x1 and x2, respectively, and their signalintensities are z1 and z2, respectively, equations of Gaussiandistribution can be obtained for data of the two selected points byusing unknowns k and σ as follows:

z1=k/σ×exp(−(x1)̂2/(2×σ̂2))

z2=k/σ×exp(−(x2)̂2/(2×σ̂2))

The unknowns k and σ can be determined by solving simultaneous equationsof the above two equations and therefore, by using determined values ofk and σ, the maximum value of the signal intensities in FIG. 6D can becalculated as being k/σ.

By determining in advance the maximum value of signal intensitiesobtained through the calculation as above in respect of a plurality ofstandard particles having different sizes, the relation between the sizeof a standard particle and the maximum value of signal intensities canbe determined. By comparing the maximum value of signal intensities ofan actually detected defect with the aforementioned correlation, thesize of the defect can be determined.

Next, another embodiment when the maximum value of signal intensities iscalculated will be described with reference to FIGS. 9A to 9C.

Of these figures, FIG. 9A illustrates a saturated signal distribution inwhich like FIG. 6C the signal waveform of defect data is afrustum-shaped waveform and FIGS. 9B and 9C are diagrams showing theshape of the saturated signal portion and being useful to explaindetermination of the maximum value of signal intensities.

The relation between a signal waveform 812 and a top portion 807 isillustrated in FIG. 9A and of the signal waveform 812, a portionreaching the saturation region of the sensor 305 to lack data in excessof the saturation region is at the top 807.

A sectional waveform of the signal waveform 812 is illustrated in FIG.9B and in the figure, ordinate represents the signal intensity andabscissa represents the position of pixels of the signal. A saturationlevel 806 indicates the saturation level of the sensor 305 and a signalwidth 813 indicates the width of the top 807. Signal intensity 814 is amaximum value which would be obtained with an unsaturated sensor.

Next, a method of calculating the maximum value 814 of signalintensities from the saturated signal waveform 812 will be described.Where the saturation level 806 is SL, the signal width 813 is SW and thesignal intensity 814 is PL,

SL=k/σ×exp(−(−SW/2)̂2/(2×σ̂2))

PL=k/σ

can be obtained through approximation based on Gaussian distribution. Inthe equations, k is a coefficient and σ is a value which can becalculated from the construction of the optical system in the defectinspection apparatus of the present invention.

Accordingly, from the two equations as above, PL can be calculated as

PL=SL/exp(−(−SW/2)̂2/(2×σ̂2))

where the SL is an output when the sensor 305 is saturated and forexample, when an AD converter of the photo-detection unit 300 is of 8bits, the SL is of 255 gradation. Depending on the construction of theoptical system, the σ90 is given values of 0 to 1. Subsequently, amethod for calculation of SW will be described.

Illustrated in FIG. 9C is the shape of top 807. In this region, thephoto-detection unit 104 is saturated. In the figure, an saturation area815 and the signal width 813 are shown. Since the signal waveform 812 isdeemed as complying with the Gaussian distribution, the shape ofsaturation area 815 can be supposed to be circular. Therefore, where thesignal width 813 is SW and the saturation area has an area of SA,

SW=2×√{square root over ( )}(SA/π)

can be calculated. It is to be noted that √(A) signifies calculation ofa square root of A and π is the circle ratio. The area of saturationarea 815 corresponds to the number of pixels for which the sensor 305 issaturated. In connection with the saturated pixels, the maximum value ofoutput of the AD converter of sensor 305 can be used which is set inconsideration of electrical noise of the sensor 305. For example, whenthe AD converter is of 8 bits, the maximum value of output is of 255gradation but when the electrical noise is of 10 gradation, saturationmay be considered as taking place for 245 or more gradation.

If the signal waveform 807 is not saturated, calculation similar to theabove may be carried out by using the maximum value of signal waveform807 as saturation level 806.

Through the above calculation, the maximum value of signal intensitiescan be calculated and therefore, by comparing a value calculated with astandard particle with a value detected with a detected defect, the sizeof the defect can be measured.

While the foregoing description is given by taking the maximum value ofsignal intensities, for instance, a cumulative value of signalintensities of a defect may be used in place of the maximum value ofsignal intensities. In this case, in a method of calculating acumulative value of signal intensities of the defect, a value obtainedby adding variable-densities of individual pixels of a detected defectmay be used. The use of the cumulative value has an advantage that theerror in sampling signals can be reduced. Here, a signal intensitycorrection method using a cumulative value of signal intensities will bedescribed. Referring to FIGS. 10A to 100, the Gaussian distribution isexpressed three-dimensionally. FIG. 10A shows an instance wheredetection is performed by means of a sensor with which the defect signalis not saturated, FIG. 10B shows that the signal is saturated at y=y₁and FIG. 10C shows signals less than y=y₂ (<y₁). In the method to bedescribed below, signal intensities covering the entire Gaussiandistribution can be calculated when cumulative values of signalintensities can be obtained in connection with FIGS. 10B and 10C.

It is assumed that the volume of the entire Gaussian distribution is V0and the maximum value of signal y is y₀ in FIG. 10A, the volume of aportion below y=y₁ is V1 in FIG. 10B and the volume of a portion belowy=y₂ (<y₁) is V2 in FIG. 10C. With the sectional shape of Gaussiandistribution taken on line parallel to x-axis in FIG. 9B, the sectionalshape is supposedly expressed by

y=y ₀·exp(−x ²/2/σ²)

In this condition, when integration is taken along y-axis and theGaussian distribution is sectioned orthogonally to y-axis at arbitrarytwo points a and b on y-axis (where 0 □a□b□y₀), a volume V_(a˜b) ofGaussian distribution between the points a and b can be expressed by thefollowing equation:

V _(a˜b)=2π·σ² [b·{Log(y ₀)−Log(b)}−a·{Log(y ₀)−Log (a)}+(b−a)]

Accordingly, by substituting (0, y₀) for (a, b), V0 can be expressed asfollows:

V0=2πσ² ·y ₀

Then, by substituting (0, y₁) for (a, b) and (0, y₂) for (a, b), V1 andV2 can be expressed as follows:

V1=2πσ² ·y ₀ ·[y ₁·{Log(y ₀)−Log(y ₁)}−y ₁]

V2=2πσ² ·y ₀ ·[y ₂·{Log(y ₀)−Log(y ₂)}−y ₂]

In the above equations “Log” signifies calculation of natural logarithm.By rewriting a volume ratio V1/V2 to CC, the CC can be calculated asfollows:

CC=[y ₁·{Log(y ₀)−Log(y ₁)}−y ₁]/[y₂·{Log(y ₀)−Log (y ₂)}−y ₂]

When considering that y₁ and y₂ are values smaller than the saturationlevel of the sensor 305 and hence V1 and V2 can be measurable, the aboveequation is an equation of one variable concerning the variable y₀ andtherefore can be solved for y₀. With y₀ determined, σ can be determinedfrom equation for determination of V1 or V2. Since y₀ and σ aredetermined in this manner, the entire volume V0 of the Gaussiandistribution can be calculated.

The present invention has been described as using the AD converter of 8bits but an AD converter of 10 bits or more may be used. The largernumber of bits is meritorious in that changes in intensity of lightobtained by the photo-detection unit can be acquired finely andtherefore a defect or the size of the defect can be calculated with highprecision. Further, the present invention has been described by takingan instance where the signal waveform of a defect is approximated by aGaussian distribution but even when a function resulting fromapproximation using two variables other than the Gaussian distributionis used, a cumulative value of signal intensities can be obtainedthrough a method similar to the aforementioned method. In the case ofthree or more variables, volumes V3, V4, . . . for signal values lessthan an arbitrary value below the saturation level can be used inaddition to the volumes V1 and V2 so that variables necessary forcalculation of the cumulative value of signals may be determined.

To add, in the present embodiment, the illumination optical system 100has been exemplified as using the laser beam in describing theconstruction of the apparatus but white light may be used instead of thelaser beam. If the inspecting object is a circuit pattern having arepeat nature, the difference between an image having no defect on therepeat pattern and an image having a defect thereon may first beacquired and thereafter, the previously-described size measurementprocess may be carried out. Further, in case a defect is present on acircuit pattern or a film, for example, an oxide film or metal film and,irrespective of the presence or absence of the repeat nature, data ofrays of scattering light or reflection factor data is acquired inadvance from the circuit pattern or the film, the size data of thedefect may be corrected by using that data. Furthermore, in the presentexample, comparison with the size of a standard particle for the purposeof measuring the size of a defect has been described but comparison witha defect of known size substituting for a standard particle may beadopted.

The cumulative value of signals thus determined is converted into a sizeaccording to a method to be described hereinafter. When the particlesize of a particle is smaller than the wavelength as describedpreviously, it is known that the Rayleigh scattering theory stands andthe quantity of scattering light is proportional to the sixth power ofthe particle diameter. Therefore, by determining the sixth root of thecumulative value and by multiplying it by a proportional coefficientcomplying with the intensity of illumination, the conversion to thedimension can be achieved. FIG. 11 is a graph showing data obtained whena mirror wafer of silicon (Si) coated with standard particles isinspected with the defect inspection apparatus. In the graph, abscissarepresents the dimension of standard particle and ordinate representsthe sixth root of the signal intensity cumulative value. The data isobtained at the illumination wavelength being about 0.5 μm and thereforevalidity of the good proportional relation between the particle diameterand the sixth root of the signal intensity cumulative value can be seenclearly for standard particles of 0.1 μm, 0.2 μm and 0.3 μm particlediameters which are smaller than the wavelength. An approximate curve1001 is calculated through the method of least squares on the basis ofdata of standard particles of 0.3 μm or less particle diameters. At thattime, when representation of abscissa is substituted for x andrepresentation of ordinate is substituted for y in the graph, theapproximate curve can be expressed by equation y=a×x+b, where a and bare values determined through the method of least squares. Then, forcalculation of defect dimension x from the sixth root y of the signalcumulative value, x=(y−b)/a may be computed.

Turning now to FIG. 13, there is illustrated a graph showing therelation between defect dimension and cumulative value of signals. Sinceaccording to the Rayleigh scattering theory the sixth power of thedimension is proportional to the cumulative value of signals, anapproximate curve is determined exemplarily on the basis of thisrelation.

In the case of an example of graph shown in FIG. 14, a plurality ofconversion expressions are provided for conversion of the cumulativevalue of signals to the dimension. As well known in the art, when thedimension of a particle is smaller than the wavelength, the Rayleighscattering theory stands whereas the Lorentz Mie theory stands for theparticle dimension nearly equaling the wavelength and the approximationof Fraunhofer stands for the particle dimension being sufficientlylarger than the wavelength. Accordingly, the relation between signalcumulative value and dimension can be provided differently depending onthe particle dimension, thus improving the accuracy of dimensioncalculation.

In the present embodiment, an example has been described in which thewafer coated with standard particles is measured in determining theapproximate curve but in another embodiment, a standard wafer built inwith patterns and defects of known dimensions may also be used. Further,due to the fact that scattering from a particle is affected by areflection factor of the wafer surface, either a wafer formed with afilm of a material used during semiconductor production or a sample of awafer of actual product coated with standard particles may be adopted inplace of the mirror wafer. In this case, by adaptively using optimumapproximate curves for individual inspection steps, highly accuratedimension measurement can be achieved.

In still another embodiment, the quantities of scattering light byparticles are calculated in advance through simulation and stored in theform of a database so that a suitable approximate curve may be selectedduring an inspection in accordance with a production step and a materialof wafer surface. In this case, since the signal intensity to bedetected changes with the illumination intensity constituting theinspection condition, the quantity of scattering light corresponding toat least one illumination intensity is measured in advance. If aninspection proceeds at an illumination intensity N times theillumination intensity measured in advance, simulation data of thescattering light quantity may be N multiplied. Available as a simulatorfor calculation of the quantity of scattering light from a particle isan MIST by NIST (National Institute of Standards and Technology), an EMF1ex by Weidlinger Associates, Inc., or DDSURF by Laser DiagnosticsLaboratory of Arizona State University.

Although the method of least squares has come up exemplarily inconnection with the method of determining the approximate curve but themethod of least squares has a nature susceptible to the influence of theoutlying value. Therefore, a robust estimation method immune to theinfluence of the outlying value may be adopted. A description will begiven by way of example of an M-estimation. In the method of leastsquares, where the error between an i-th sample and an approximate curveis Ei, an evaluation criterion as expressed by the following equation:

LMS=minΣ(Ei)²

is used. According to this evaluation criterion, when the error betweena model and a sample complies with a standard deviation of average 0, anestimated model is optimized. But in case the sample contains anoutlying value, a good model cannot always be estimated. Under thecircumstances, the M-estimation comes up in which the aforementionedevaluation criterion is so modified as to give a small weight to anoutlying value. FIG. 12 is illustrative of comparison of the method ofleast squares with the M-estimation. An approximate curve 1002 is basedon the method of least squares and an approximate curve 1003 is based onthe M-estimation. Where a weight function distant by d from a model isw(d), the evaluation criterion based on the M-estimation is expressed bythe following equation:

M=minΣ{w(d)·Ei ²}

FIG. 15 illustrates an example of weight function which is expressed bythe following equation:

$\begin{matrix}{{w(d)} =} & \left\{ {1 - \left( {d/W} \right)^{2}} \right\}^{2} & \ldots & {{d} \leqq W} \\\; & 0 & \ldots & {{d} > W}\end{matrix}$

Since, pursuant to the above weight function w(d), the influence of asample distant from the model by more than W is not considered, theimmunity to the influence of the outlying value can be assured.

Turning to FIG. 16, there is shown a flowchart of determining anapproximate curve pursuant to the M-estimation. At the outset, aninitial value is determined in step 1006 through the method of leastsquares. In step 1007, a weight is determined from a distance betweenthe approximate curve and a sample in accordance with a weight functionw (d). In step 1008, a method of weighted least squares is executed tocalculate the approximate curve. It is decided in step 1009 whether theaccuracy of the approximate curve is sufficient and if the accuracy isdetermined to be insufficient, the steps 1007, 1008 and 1009 arerepeated.

Available as another method for determination of an approximate curve isLMS-estimation or LTS-estimation. In the LMS-estimation, a median of asquare of the difference between the model and a sample is minimized. Inthe LTS-estimation, for n samples, squares of errors each between themodel and each of the n samples are arrayed in order of smaller tolarger values and the sum of squares of errors up to an {h=(n/2)+1}-thsquare of error is minimized.

By combining the method of least squares with the robust estimation inthis manner, the immunity to the influence of outlying value can beachieved, thereby ensuring that the relation between the signalintensity and the particle diameter can be determined properly.

In the foregoing description, a defect inspection is executed by usingrays of scattering light. This method is meritorious in that a defectcan be found highly efficiently. Determining the size of a detectaccording to the aforementioned method leads to an advantage that thedefect can be found without resort to a particular light sourcededicated to measurement of the size and that the measurement of thesize can be accomplished with a light source resulting from the samerays of scattering light.

[As Regards Defect Signal Estimation and Sampling when the Defect Signalis Saturated]

The relation between the signal waveform of a defect and the samplingpitch is illustrated in FIG. 17. A waveform 1010 is a signal waveform ofa defect which is approximated by a Gaussian function. A sampling pitch1011 shows an instance where the sampling pitch during defect detectionis 2σ. The theoretical value of signal intensity cumulative value as theillumination intensity increases and errors occurring in the estimationof the signal intensity cumulative value based on the method explainedin connection with FIG. 16 are shown in FIGS. 18 and 19 in respect ofdifferent sampling pitches. Data in FIG. 18 is obtained for a samplingpitch being 2σ as indicated at plotting 1011 and it is demonstrated thatas the illumination intensity increases by 100 times or more, the errorbecomes very large. In FIG. 19, part of FIG. 18 is illustratedexaggeratedly. In a zone bounded by dotted line, the dimension accuracyis within ±20%. Plotting 1013 for the sampling pitch being 1σ andplotting 1014 for the sampling pitch being 0.5σ are both realized withinthe accuracy ±20%. Because of the analogy between the linear Besselfunction and the Gaussian function, 2σ in the Gaussian function isdeemed to correspond to the resolution of the photo-detection unit 300.From FIGS. 18 and 19, it will be seen that even when defects responsiblefor generation of rays of scattering light which differ by 3 figures inthe quantity of light are present on the same wafer, the signal waveformneeds to be sampled at a pitch half or less the resolution of thephoto-detection unit 300 in order to calculate the dimension with highaccuracies.

[Correcting Optical System for Aberration and Sensor for Irregularitiesin Sensitivity]

In the foregoing embodiments, aberration of the optical system andirregularities in sensitivity of the sensor have not been referred tobut in the actual inspection apparatus, these factors will have theinfluence upon the accuracy of dimension calculation. In an embodimentin which the photo-detection unit 300 uses an image forming opticalsystem, the aberration behaves in the center of detection view field andat the periphery of the detection view field as illustrated in FIGS. 20Aand 20B. In the figures, detected images obtained when a wafer coatedwith standard particles of the same dimension is measured are shown,providing a defect detection image in the center of the view field inFIG. 20A and a defect detection image at the periphery of the view fieldin FIG. 20B. Two methods for relieving the influence of aberration canbe considered, of which one is for measuring the degree of aberration inadvance and providing a correction table or correction expression basedon the measurement result and the other is for proceeding with relief onreal time base during an inspection. In describing the embodiment inconnection with FIGS. 10A to 10C, it has already been shown that even ifhow far the detection signal spreads is unknown, the quantity ofscattering light can be calculated properly.

Reference will now be made to FIGS. 21A and 21B illustratingirregularities in sensitivity of the sensor 305. Of these figures, FIG.21A depicts image data of a detected defect and FIG. 21B shows a signalwaveform taken on A-A′ section in FIG. 21A. Since in the Rayleighscattering region the defect dimension is proportional to the sixth rootof the quantity of scattering light, the irregularity of the degreeapproximating that shown in FIG. 21B is found not to be a factor ofreducing the accuracy of dimension calculation.

By making reference to FIGS. 22A to 22B, an example of dimensioncorrection using a wafer provided with standard samples will bedescribed. This example has the relation to the step S140 in FIG. 1. Aplural kinds of standard particles of known dimension are scattered asshown in FIG. 22A. The relation between the dimension measured with theSEM before correction and the dimension measured with the inspectionapparatus is illustrated in FIG. 22B and the relation between thedimension measured with the SEM after correction and the dimensionmeasured with the inspection apparatus is illustrated in FIG. 22C.

The correction proceeds as will be described below. When the waferprovided with the standard samples shown in FIG. 22A is inspected withthe inspection apparatus and the dimension is calculated, the dimensionwill not sometimes be determined correctly owing to, for example,irregularities in manufacture of constituent components of theapparatus. The standard sample is known in dimension and therefore, bycomparing the apparatus output with the true value and expressing thecorrelation by an approximate expression, correction can be made. Fordetermination of the approximate expression, the method of least squaresor the robust estimation method may be used. By determining theapproximate expression and making the correction, the dimension can bedetermined highly accurately as illustrated in FIG. 22C.

In FIGS. 23A and 23B, the procedures for correcting or correcting thedefect dimension are shown. A flowchart in FIG. 23A is applied to anexample of a defect of unknown dimension so that a correctioncoefficient may be calculated by using, for example, a defect on anactual product wafer. Since defects on the product wafer are unknown indimension, the dimension of each defect needs to be measured by using anobservation apparatus such as the SEM. A flowchart in FIG. 23B isapplied to an example where a correction coefficient is calculated byusing a defect of known dimension. In the foregoing description given inconnection with FIGS. 22A to 22C, the standard particle is taken as anexample of the sample of known dimension but alternatively, a defectcontrolled for its dimension may be formed on the wafer throughphotolithography or FIB.

An example of a flowchart of calculating a dimension correctioncoefficient is shown in FIG. 24.

Reverting again to FIG. 1, another embodiment will be described.

To handling the step S110, the detection technique using the dark fieldillumination and the image forming optical system in combination in FIG.2 has been exemplified previously but another method may be employed,provided that it can detect rays of light from a defect or pattern. Forexample, a detection system using the bright field illumination and theimage forming optical system or using the dark field illumination andthe focusing optical system may be adopted.

To handle the step S120, the difference in images may be acquiredbetween adjacent dies during extraction of a defect region and bysetting a suitable threshold value, the defect region may be extracted.

To handle the step S130, other characteristic quantities than thequantity of scattering light and the maximum value of signal intensitiesmay be used as the quantity characteristic of a defect. In that case,information about coordinate data and adjoining dies can be reflected oncalculation of the characteristic quantity. Also, the inspectioncondition of the inspection apparatus may be reflected. For example, theinspection condition includes the wavelength, light quantity andincident angle of the illumination, the scanning speed of the stage andthe magnification and numerical aperture of the photo-detection unit.Information about irregularities in manufacture of the inspectionapparatus per se may be reflected. The manufacturing irregularitiesinclude the irregularity in quantity of illumination light, theaberration of lens and the irregularity in sensitivity of the sensor.Two methods of reflecting data are available, of which one is a methodof incorporating the data as a variable into the characteristic quantitycalculation expression and the other is a method of sorting cases on thebasis of the information and proceeding with the cases independently. Inthe first method, after calculation of the characteristic quantity, theprogram proceeds directly to the step 140. FIGS. 25A and 25B are usefulto explain an example of sorting cases according to the second method.Illustrated in FIG. 25A is a graph showing the relation between the SEMmeasurement dimension and the characteristic quantity concerning thedimension. Illustrated in FIG. 25B is a graph showing an example wherecases are sorted on the basis of the characteristic quantity, theinspection condition and manufacturing irregularity information of theinspection apparatus per se. By virtue of the case by case sorting,irregularities in individual groups resulting from sorting can bereduced. The step S130 is followed by branching steps based on the caseby case sorting and each branching step continues to the step S140 inwhich the relation between the dimension and the signal cumulative valueis determined to calculate the dimension.

[As Regards Optical System of Defect Inspection Apparatus]

In the foregoing description of this invention, the optical system ofthe defect inspection system has been described as detecting a defect byusing rays of scattering light and measuring the size of the defect butthe method of this invention can also be applicable to an optical systemfor detecting a defect by using rays of reflection light and measuringthe size of the defect. Generally, the use of the scattering lightenjoys high efficiency of inspection but is bad at accuracy ofmeasurement whereas the use of the reflection light is bad at efficiencyof inspection but good at accuracy of measurement. The method of thepresent invention can be applicable to the both cases.

As has been set forth so far, according to the present invention, adefect inspection apparatus and a defect inspection method can beprovided which can speedily proceed with countermeasures against faultsin execution of the inspection of production process of semiconductorwafer and thin film substrate and in the faulty analysis as well bymeasuring the size of a defect or of a pattern defect with highaccuracies.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The presentembodiment is therefore to be considered in all respects as illustrativeand not restrictive, the scope of the invention being indicated by theappended claims rather than by the foregoing description and all changeswhich come within the meaning and range of equivalency of the claims aretherefore intended to be embraced therein.

1. A defect inspection apparatus for inspecting defects on an inspectingobject, comprising: an illuminator irradiates a beam of light on theinspecting object; a photo-detector detects rays of light from theinspecting object due to the irradiation of the light beam by theilluminator; a defect detector detects a defect by processing a signalobtained through detection by the photo-detector; a characteristicquantity calculator calculates a characteristic quantity related to asize of the defect; and a defect size calculator selects one of relationbetween defect size and characteristic quantity based on an inspectioncondition and calculates a size of the detected defect.
 2. A defectinspection apparatus according to claim 1, wherein the inspectioncondition is selected from one of production step or material of wafersurface.
 3. A defect inspection apparatus according to claim 1, whereinthe defect size calculator selects one of relation between defect sizeand characteristic quantity in accordance with the inspecting object. 4.A defect inspection apparatus according to claim 1, wherein thecalculated characteristic quantity is a sum total of intensities of thesignal.
 5. A defect inspection apparatus according to claim 1, whereinthe calculated characteristic quantity is a maximum value of intensitiesof the signal.
 6. A defect inspection apparatus according to claim 1,wherein the photo-detector has a sampling pitch which is no greater than½ of the optical resolution.
 7. A defect inspection apparatus accordingto claim 1, wherein in a process for determining the size of a defect,parameters inherent of the inspection apparatus are used.
 8. A defectinspection apparatus according to claim 1, wherein the relations betweendefect size and characteristic quantity are calculated by an opticalsimulation.
 9. A defect inspection method for inspecting defects on aninspecting object, comprising the steps of: irradiating by anilluminator a beam of light on the inspecting object; detecting by aphoto detector rays of light from the inspecting object due to theirradiation of the light beam by the illuminator; detecting by a defectdetector a defect by processing a signal obtained through detection bythe photo-detector; calculating by a characteristic quantity calculatora characteristic quantity related to a size of the defect; and selectingby a defect size calculator one of relation between defect size andcharacteristic quantity based on an inspection condition and calculatesa size of the detected defect.
 10. A defect inspection method accordingto claim 9, wherein the inspection condition is selected from one ofproduction step or material of wafer surface.
 11. A defect inspectionmethod according to claim 9, wherein the defect size calculator selectsone of relation between defect size and characteristic quantity inaccordance with the inspecting object.
 12. A defect inspection methodaccording to claim 9, wherein the calculated characteristic quantity issum total of the intensities of the signal.
 13. A defect inspectionmethod according to claim 9, wherein the calculated characteristicquantity is a maximum value of intensities of the signal.
 14. A defectinspection method according to claim 9, wherein the photo-detector has asampling pitch which is no greater than ½ of the optical resolution. 15.A defect inspection method according to claim 9, wherein in a processfor determining the size of a defect, parameters inherent of aninspection apparatus are used.
 16. A defect inspection method accordingto claim 9, wherein the relations between defect size and characteristicquantity are calculated by an optical simulation.